Contents: Molecular Beam Epitaxy of High Tc Superconductors, Ultra- Submicron Devices, GaAs/Si Integrated Circuits, The Chemical and Electronic Structure of Refractory Metal-GaAs Interfaces, The Study of Crystal Properties Using Channeling Radiation, Complementary MOS Device and Material Physics at 77 K, Coding for Spectrally Constrained Channels, and Real Time Statistical Signal Processing.